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| Specification-1: | B5818ws |
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Schottky Barrier Diode B5817WS-5819WS
Definition: A Schottky Barrier Diode is a type of semiconductor diode formed by the junction of a metal (e.g., aluminum, platinum, tungsten) and a semiconductor (usually N-type silicon), creating a Schottky barrier instead of a traditional PN junction. It is characterized by low forward voltage drop (typically 0.15-0.45 V), fast switching speed, and low reverse recovery time, making it suitable for high-frequency applications and power electronics.
The marking bar indicates the cathode
Solid dot=green molding compound device, if none, the normal device.
Maximum ratings and electrical characteristics, single diode @Ta=25ºC
| Parameter | Symbol | B5817WS | B5818WS | B5819WS | Unit |
| Non-repetitive peak reverse voltage | VRM | 20 | 30 | 40 | V |
| Peak repetitive peak reverse voltage working peak reverse voltage DC blocking voltage | VRRM VRWM VR |
20 | 30 | 40 | V |
| RMS reverse voltage | VR(RMS) | 14 | 21 | 28 | V |
| Average rectified output current | IO | 1 | A | ||
| Non-repetitive peak forward surge current @ t=8.3ms | IFSM | 9 | A | ||
| Repetitive peak forward current | IFRM | 1.5 | A | ||
| Power dissipation | Pd | 250 | mW | ||
| Thermal resistance junction to ambient | RθJA | 400 | ºC/W | ||
| Operation junction temperature range | TJ | -40~+125 | ºC | ||
| Storage temperature range | TSTG | -55~+150 | ºC | ||
Electrical characteristics (Ta=25ºC unless otherwise specified)
| Parameter | Symbol | Test condition | Min | Max | Unit |
| Reverse breakdown voltage | V(BR) | IR=1mA B5817WS B5818WS B5819WS |
20 30 40 |
V | |
| Reverse voltage leakage current | IR | VR =20V, B5817WS VR=30V, B5818WS VR =40V, B5819WS |
1 | mA | |
| Forward voltage | VF | B5817WS, IF=1A IF=3A |
0.45 0.75 |
V | |
| B5818WS, IF=1A IF=3A |
0.55 0.875 |
V | |||
| B5819WS, IF=1A IF=3A |
0.6 0.9 |
V | |||
| Diode capacitance | CD | VR=4V,f=1MHZ | 120 | pF |
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