High-Performance B5817ws-B5819ws Schottky Barrier Diode for Efficient Circuits

• Customization: Available
• Certification: RoHS
• Specification-1: B5818ws
• Model NO.: Diode
• Specification-2: B5819ws
• MOQ: 20000PCS
• Lead Time: 2 Weeks
• Vrm B5817ws: 20V
• Vrm B5818ws: 30V
• Vrm B5819ws: 40V
• Io: 1A
• Ifsm: 9A
• Transport Package: Carton
• Specification: B5817WS
• Trademark: ETOPMAY TOPMAY
• Origin: China
• Production Capacity: 10000000

Product Description

Product Description

Schottky Barrier Diode B5817WS-5819WS
Definition: A Schottky Barrier Diode is a type of semiconductor diode formed by the junction of a metal (e.g., aluminum, platinum, tungsten) and a semiconductor (usually N-type silicon), creating a Schottky barrier instead of a traditional PN junction. It is characterized by low forward voltage drop (typically 0.15-0.45 V), fast switching speed, and low reverse recovery time, making it suitable for high-frequency applications and power electronics.

Marking

The marking bar indicates the cathode
Solid dot=green molding compound device, if none, the normal device.

 

Product Parameters

Maximum ratings and electrical characteristics, single diode @Ta=25ºC

Parameter	Symbol	B5817WS	B5818WS	B5819WS	Unit
Non-repetitive peak reverse voltage	VRM	20	30	40	V
Peak repetitive peak reverse voltage working peak reverse voltage DC blocking voltage	VRRM VRWM VR	20	30	40	V
RMS reverse voltage	VR(RMS)	14	21	28	V
Average rectified output current	IO	1			A
Non-repetitive peak forward surge current @ t=8.3ms	IFSM	9			A
Repetitive peak forward current	IFRM	1.5			A
Power dissipation	Pd	250			mW
Thermal resistance junction to ambient	RθJA	400			ºC/W
Operation junction temperature range	TJ	-40~+125			ºC
Storage temperature range	TSTG	-55~+150			ºC

Electrical characteristics (Ta=25ºC unless otherwise specified)

Parameter	Symbol	Test condition	Min	Max	Unit
Reverse breakdown voltage	V(BR)	IR=1mA B5817WS B5818WS B5819WS	20 30 40		V
Reverse voltage leakage current	IR	VR =20V, B5817WS VR=30V, B5818WS VR =40V, B5819WS		1	mA
Forward voltage	VF	B5817WS, IF=1A          IF=3A		0.45 0.75	V
		B5818WS, IF=1A          IF=3A		0.55 0.875	V
		B5819WS, IF=1A          IF=3A		0.6 0.9	V
Diode capacitance	CD	VR=4V,f=1MHZ		120	pF

 

Curve

Packaging & Shipping

Detailed Photos