| Customization: | Available |
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| Certification: | RoHS |
| Encapsulation Structure: | Chip Transistor |
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3N10I
N-Channel Enhancement Mode MOSFET
Description
The 3N10l uses advanced trench technology
to provide excellent Rps(on), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDs = 100V ID =3A
RDs(ON)<248mQ @ VGs=10V
Application
Battery protection
Load switch
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