Customization: | Available |
---|---|
Certification: | RoHS |
Encapsulation Structure: | Chip Transistor |
Shipping Cost: | Contact the supplier about freight and estimated delivery time. |
---|
Payment Methods: |
![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
---|---|
Support payments in USD |
Secure payments: | Every payment you make on Made-in-China.com is protected by the platform. |
---|
Refund policy: | Claim a refund if your order doesn't ship, is missing, or arrives with product issues. |
---|
Suppliers with verified business licenses
Audited by an independent third-party inspection agency
3N10I
N-Channel Enhancement Mode MOSFET
Description
The 3N10l uses advanced trench technology
to provide excellent Rps(on), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDs = 100V ID =3A
RDs(ON)<248mQ @ VGs=10V
Application
Battery protection
Load switch