| Customization: | Available |
|---|---|
| Certification: | RoHS |
| Encapsulation Structure: | Chip Transistor |
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20V P-Channel MOSFET 2301
This MOSFET is typically used in low-voltage applications such as power management, switching circuits, or signal processing in electronic devices.
| V(BR)DSS | RDS(on)max | ID |
| -20V | 110mΩ@-4.5V | -2.3A |
| 140mΩ@-2.5V |
TrenchFET Power MOSFET
.Excellent Ros(on) and Low Gate Charge
.DC/DC Converter
.Load Switch for Portable Devices
.Battery Switch
Absolute max. ratings(Ta=25ºC unless otherwise noted)
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDC | -20 | V |
| Gate-source voltage | VGS | ±8 | V |
| Continuous drain current | ID | -2.3 | V |
| Pulsed drain current (t=300us) | IDM | -10 | A |
| Power dissipation | PD | 0.35 | A |
| Thermal resistance from junction to Ambient | RθJA | 357 | ºC/W |
| Junction temperature | TJ | 150 | ºC |
| Storage temperature | TSTG | -55~+150 | ºC |
| Parameter | Symbol | Test condition | Min | Type | Max. | Unit |
| Static characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V, ID=250uA | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS=20V VGS=0V | -1 | uA | ||
| Gate-body leakage current | IGSS | VDS=VGS, ID=-250uA | -1 | nA | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=-250uA | -0.4 | -0.7 | -1 | V |
| Drain-source on-resistance | RDS(on) | VGS=-4.5V,ID=-3A | 70 | 110 | mΩ | |
| VGS=-2.5V, ID=-2A | 110 | 140 | ||||
| Forward tranconductance | Gfs | VGS=-5V, ID=-2A | 5 | S | ||
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | VDS=-10V, VGS=0V, f=1MHz | 405 | pF | ||
| Output capacitance | Coss | 75 | ||||
| Reverse transfer capacitance | Crss | 55 | ||||
| Gate resistance | Rg | F=1MHz | 6 | Ω | ||
| Total gate charge | Qg | VDS=-10V, VGS=-2.5V, ID=3A | 3.3 | 12 | nC | |
| Gate-source charge | Qgs | 0.7 | ||||
| Gate-drain charge | Qgd | 1.3 | ||||
| Turn-on delay time | Td(on) | VDD=-10V,VGEN=-4.5V, ID=-1A, RL=10Ω, RGEN=1Ω | 11 | ns | ||
| Turn-on rise time | Tr | 35 | ||||
| Turn-off delay time | td(off) | 30 | ||||
| Turn-off fall time | tf | 10 | ||||
| Source-drain diode characteristics | ||||||
| Diode forward current | IS | TC=25ºC | -2.3 | A | ||
| Diode pulsed forward current | ISM | -10 | A | |||
| Diode forward voltage | VDS | VGS=0V, IS=-1.3A | -1.2 | V | ||
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