Bzt52c2V0s Thru Bzt52c75s Small Signal Zener Diodes

• Customization: Available
• Certification: RoHS
• Power Dissipation: 300MW Max
• Model NO.: Diode
• Voltage: 2.0V-75V
• Tolerance: 5%
• MOQ: 20000PCS
• Lead Time: 2 Weeks
• Case: SOD-323
• Terminals: Solderable Per Mil-Std-750,Method 2026
• Polarity: Polarity Symbol Marking on Body
• Mounting Position: Any
• Weight: 0.00019 Ounce,0.00548 Grams
• Transport Package: Carton
• Specification: BZT52C2V0S THRU BZT52C75S
• Trademark: ETOPMAY TOPMAY
• Origin: China
• Production Capacity: 50000000

Product Description

Product Description

Small signal Zener diodes
BZT52C2V0S THRU BZT52C75S

The BZT52CxxS series represents a family of small signal Zener diodes designed for voltage regulation and stabilization in low-power electronic circuits. These surface-mount devices (SMD) are part of the BZT52C product line, which is widely used in applications requiring precise voltage reference points, overvoltage protection, and signal conditioning. The series spans a broad voltage range, with part numbers denoted by their nominal Zener voltage (e.g., "2V0" = 2.0V, "75" = 75V), making them versatile for various circuit designs.
 

Features

1. Planar die construction.
2.Total power dissipation: Max. 300mW Wide
3. Zener reverse voltage range 2.0V to 75V.
4. General purpose, medium current.
5. Small plastic package suitable for surface mounted design.
6. Tolerance approximately±5%
 

Marking

 

XX= Device code, see table on page2 the marking code
The marking bar indicates the cathode
 

Mechanical Data

Case:SOD-323
Terminals: Solderable per MIL-STD-750,Method 2026
Polarity: Polarity symbol marking on body
Mounting Position: Any
Weight:0.00019 ounce,0.00548 grams


 

Specifications

Maximum Ratings(Ta=25ºC unless otherwise specified)

Characteristic	Symbol	Value	Unit
Forward voltage at IF=10mA (note 2)	VF	0.9	V
Power dissipation (note 1)	Pd	200	Mw
Typical thermal resistance from junction to ambient (note 1)	RθJA	417	ºC/w
Junction temperature	Tj	150	ºC
Storage temperature	Tstg	-55~+150	ºC

Notes:
1. Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads.
2. Short duration test pulse used to minimize self-heating effect
3. f=1kHz
 

Product Parameters

ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
 

Type	Marking	Zener voltage range				Dynamic impedance	Reverse current
		VZT (at IZT)			IZT	ZZT (at IZT)	IR	at VR
		Min (V)	Norm(V)	Max(V)	(mA)	Max(Ω)	Max (μA)	(V)
BZT52C2V0S	WY	1.8	2	2.15	5	100	120	0.5
BZT52C2V2S	WZ	2.08	2.2	2.33	5	100	120	0.7
BZT52C2V4S	WX	2.28	2.4	2.56	5	100	120	1
BZT52C2V7S	W1	2.5	2.7	2.9	5	110	120	1
BZT52C3V0S	W2	2.8	3	3.2	5	120	50	1
BZT52C3V3S	W3	3.1	3.3	3.5	5	130	20	1
BZT52C3V6S	W4	3.4	3.6	3.8	5	130	10	1
BZT52C3V9S	W5	3.7	3.9	4.1	5	130	5	1
BZT52C4V3S	W6	4	4.3	4.6	5	130	5	1
BZT52C4V7S	W7	4.4	4.7	5	5	130	2	1
BZT52C5V1S	W8	4.8	5.1	5.4	5	130	2	1.5
BZT52C5V6S	W9	5.2	5.6	6	5	80	1	2.5
BZT52C6V2S	WA	5.8	6.2	6.6	5	50	1	3
BZT52C6V8S	WB	6.4	6.8	7.2	5	30	0.5	3.5
BZT52C7V5S	WC	?	7.5	7.9	5	30	0.5	4
BZT52C8V2S	WD	7.7	8.2	8.7	5	30	0.5	5
BZT52C9V1S	WE	8.5	9.1	9.6	5	30	0.5	6
BZT52C10S	WF	9.4	10	10.6	5	30	0.1	7
BZT52C11S	WG	10.4	11	11.6	5	30	0.1	8
BZT52C12S	WH	11.4	12	12.7	5	35	0.1	9
BZT52C13S	W1	12.4	13	14.1	5	35	0.1	10
BZT52C15S	WJ	13.8	15	15.6	5	40	0.1	11
BZT52C16S	WK	15.3	16	17.1	5	40	0.1	12
BZT52C18S	WL	16.8	18	19.1	5	45	0.1	13
BZT52C20S	WM	18.8	20	21.2	5	50	0.1	15
BZT52C22S	WN	20.8	22	23.3	5	55	0.1	17
BZT52C24S	WO	22.8	24	25.6	5	60	0.1	19
BZT52C27S	WP	25.1	27	28.9	2	70	0.1	21
BZT52C30S	WQ	28	30	32	2	80	0.1	23
BZT52C33S	WR	31	33	35	2	80	0.1	25
BZT52C36S	WS	34	36	38	2	90	0.1	27
BZT52C39S	WT	37	39	41	2	100	0.1	30
BZT52C43S	WU	40	43	46	2	130	0.1	33
BZT52C47S	WV	44	47	50	2	150	0.1	36
BZT52C51S	WW	48	51	54	2	180	0.1	39
BZT52C56S	XW	52	56	60	2	200	0.1	43
BZT52C62S	6E	58	62	66	2	215	0.1	47
BZT52C68S	6F	64	68	72	2	240	0.1	52
BZT52C75S	6H	70	75	79	2	265	0.1	56

 

1. V_ZT is tested with pulses(20ms)

Drawing

 

Curve