Ss12 Thru Ss120 Surface Mount Schottky Barrier Rectifier

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: RECTIFIER
• Certification: RoHS
• Material: Silicon
• Forward Current: 1.0A
• Case: SMA
• Terminals: Solderable Per Mil-Std-750, Method 2026
• Approx.Weight: 70mg/0.0025oz
• MOQ: 20000PCS
• Lead Time: 2 Weeks
• Ifsm: 25A
• Temp.Range: -55~+150′c
• Transport Package: Carton
• Specification: Reverse Voltage - 20 to 200 V
• Trademark: ETOPMAY TOPMAY
• Origin: China
• Production Capacity: 50000000PCS

Product Description

Product Description

SS12 THRU SS120 Surface Mount Schottky Barrier Rectifier

The SS12 THRU SS120 Surface Mount Schottky Barrier Rectifier series is a high-performance range of semiconductor devices designed to efficiently convert alternating current (AC) to direct current (DC) in a wide variety of electronic applications. These rectifiers are specifically engineered with a surface-mount package, which offers several key advantages over traditional through-hole components. The surface-mount design significantly reduces board space requirements, making it an ideal choice for modern, compact electronic devices where space optimization is crucial.

Reverse Voltage - 20 to 200 V
Forward Current - 1.0A

Features

Metal silicon junction, majority carrier conduction
For surface mounted applications
Low power loss, high efficiency
High forward surge current capability
For use in low voltage, high frequency inverters, freewheeling, and polarity protection applications
 

Mechanical Data

Case: SMA
Terminals: Solderable per MIL-STD-750, Method 2026
Approx.Weight:70mg/0.0025oz

Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 %.
 

Product Parameters

Parameter	Symbols	SS12	SS14	SS16	SS18	SS110	SS112	SS115	SS120	Units
Maximum Repetitive Peak Reverse Voltage	VRRM	20	40	60	80	100	120	150	200	V
Maximum RMS voltage	VRMS	14	28	42	56	7	84	105	140	V
Maximum DC Blocking Voltage	VDC	20	40	60	80	100	120	150	200	V
Maximum Average Forward Rectified Current At T.=100 ºC	IF(AV)	1.0								A
Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)	IFSM	25								A
Max Instantaneous Forward Voltage at 1A	VF	0.55		0.70		0.85		0.90		V
Maximum DC Reverse Current Ta=25°C at Rated DC Reverse Voltage Ta=100ºC	IR	0.3 10			0.2 5			0.1 2		mA
Typical Junction Capacitance (1)	Cj	110		80						pF
Typical Thermal Resistance(2)	RθJA	90								ºC/W
Operating Junction Temperature Range	Tj	-55~+150								ºC
Storage temperature range	Tstg	-55~+150								ºC

(1) Measured at 1MHz and applied reverse voltage of 4 V D.C.
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
 

Curve

 

Drawing

 

Marking

Type number	Marking code
SS12	SS12
SS14	SS14
SS16	SS16
SS18	SS18
SS110	SS110
SS112	SS112
SS115	SS115
SS120	SS120

 

Detailed Photos