| Customization: | Available |
|---|---|
| Encapsulation Structure: | Plastic Sealed Transistor |
| Application: | Rectifier |
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US2A THRU US2M High Efficient Rectifier Diodes
The US2A through US2M series of High Efficient Rectifier Diodes are advanced semiconductor devices engineered to meet the demanding requirements of modern power conversion applications. These diodes offer a high-performance solution for converting alternating current (AC) to direct current (DC), ensuring efficient power transfer and minimizing energy losses.
lF(AV) 2A
VRRM 50V-1000V
High surge current capability
Polarity: Color band denotes cathode
Rectifier
US2X (X: from A to M)
Limiting values (Absolute max. rating)
| Item | Symbol | Unit | Test conditions | US2 | ||||||
| A | B | D | G | J | K | M | ||||
| Repetitive peak reverse voltage | VRRM | V | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | |
| Max. RMS voltage | VRMS | V | 35 | 70 | 140 | 280 | 420 | 560 | 700 | |
| Average forward current | IF(AV) | A | 60hZ half-sine wave, resistance load, TL=25ºC | 2.0 | ||||||
| Surge(non-repetitive)forward current | IFSM | A | 60hz half-sine wave, 1 cycle, Ta=25ºC | 50 | ||||||
| Operation junction and storage temp. range | TJ. TSTG | ºC | -55~+150 | |||||||
| Item | Symbol | Unit | Test conditions | US2 | |||||||
| A | B | D | G | J | K | M | |||||
| Peak forward voltage | VF | V | IF=2.0A | 1.0 | 1.3 | 1.7 | |||||
| Max. reverse recovery time | trr | ns | IF=0.5A,IR=1.0A,Irr=0.25A | 50 | 75 | ||||||
| Peak reverse current | IRRM1 | μA | VRM=VRRM | Ta=25ºC | 5.0 | ||||||
| IRRM2 | Ta=100ºC | 100 | |||||||||
| Thermal resistance (typical) | RθJ-A | ºC/W | Between junction and ambient | 80 | |||||||
| RθJ-L | Between junction and terminal | 20 | |||||||||
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