Customization: | Available |
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Encapsulation Structure: | Glass Sealed Transistor |
Application: | Electronic Products |
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MB1F THRU MB10F High performance, high stability 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
High performance: These bridge rectifiers are engineered to deliver excellent electrical characteristics. This includes low forward voltage drop, which reduces power loss during the rectification process, leading to more efficient power conversion. They also have a fast switching speed, enabling them to handle rapid changes in current and voltage, making them suitable for a wide range of applications, from simple power supplies to more complex electronic circuits.
High stability: These devices are designed to maintain consistent performance over a wide range of operating conditions. They are highly resistant to temperature variations, ensuring that their electrical parameters (such as forward voltage and reverse leakage current) remain within specified limits even in extreme temperatures. Additionally, they are less prone to electrical and mechanical stress - induced failures, providing long - term reliability in various environments.
Glass Passivated Chip Junction
Reverse Voltage- 100 to 1000 V
Forward Current-0.8A
High Surge Current Capability
Designed for Surface Mount Application
.Case: MBF
·Terminals: Solderable per MIL-STD-750, Method 2026
·Approx.Weight:75mg 0.0026oz
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter | Symbols | M1 | M2 | M3 | M4 | M5 | M6 | Unit | ||
Max. repetitive peak reverse voltage | VRRM | 100 | 200 | 400 | 600 | 800 | 1000 | V | ||
Max. RMS voltage | VRMS | 70 | 140 | 280 | 420 | 560 | 700 | V | ||
Max DC blocking voltage | VDC | 100 | 200 | 400 | 600 | 800 | 1000 | V | ||
Average rectified output current Tc=125ºC | IO | 0.8 | A | |||||||
Peak forward surge current 8.3ms single half sine wave superimposed on rated load | IFSM | 30 | A | |||||||
Max. instantaneous forward voltage at 1A | VF | 1.1 | V | |||||||
Max. DC reverse current Ta=25ºC At rated DC blocking voltage Ta=125ºC |
IR | 5 40 |
uA | |||||||
Typical junction capacitance | Cj | 13 | pF | |||||||
Typical thermal resistance | RθJA RθJC |
90 30 |
ºC/W | |||||||
Operating and storage temperate range | Tj,TSTG | -55~+150 | ºC |