Competitive Price 800um Silicon Photodiode

Product Details
Customization: Available
Resistance: Fixed Resistor
Function for Resistance: Ntc Thermistor
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  • Competitive Price 800um Silicon Photodiode
  • Competitive Price 800um Silicon Photodiode
  • Competitive Price 800um Silicon Photodiode
  • Competitive Price 800um Silicon Photodiode
  • Competitive Price 800um Silicon Photodiode
  • Competitive Price 800um Silicon Photodiode
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Basic Info.

Installation
Diode
Material
Radial Leading Wire Resin Coating Type
Packaging
Throught Hole
Type
Photo Diode
Quantity
Single Connection
Shape
Cylinder
Resistance change scale
3-2mohm
Application
Temperature Compensation of Electronic Circuit,Tem
Brand
Etopmay
Package
Bulk
Spectral Range
400-1100nm
Operating Temperature
-40~+85ºC
Transport Package
Carton
Specification
10%
Trademark
TOPMAY
Origin
China
HS Code
8533211000
Production Capacity
1500 Million PCS a Year

Product Description


                                                              400-1100nm 800um Silicon Photodiode 

Introducing our Competitive Price 400-1100nm 800um Silicon LED Photodiode, perfect for your resistor and potentiometer needs. This high-quality photodiode offers a wide range of detection from 400 to 1100nm, ensuring accurate results for your projects. The 800um size makes it versatile for various applications, providing flexibility in usage. With a competitive price point, you can trust that you are getting great value for your money without compromising on quality. Whether you are a hobbyist or a professional, this photodiode is a reliable choice for your electronic components. Purchase yours today and experience the difference!

Specification
Mounting Type
Soldering
Description
400-1100nm 800um Silicon Photodiode 
P/N
 
Type
PHOTODIODE
Place of Origin
China
Brand Name
ETOPMAY
Package Type
Through Hole
Package / Case
3mm flat 
Spectral Range
400-1100nm
Active Diameter
800um
Responsivity
Re(λ=905nm, 1μw,M=1)=0.57 A/W
Multiplication Gain
M(λ=905nm, 1μw, 0.8VBR)=60
Multiplication Gain
M(λ=905nm, 1μw, 0.85VBR)=100
Rise Time
Tr(M=100,RL=50Ω,λ=905nm)=0.7 ns
Dark Current(Typical)
Id(M=100)=0.7 nA
Operating temperature
-40~+85ºC
Competitive Price 800um Silicon PhotodiodeCompetitive Price 800um Silicon PhotodiodeCompetitive Price 800um Silicon PhotodiodeCompetitive Price 800um Silicon PhotodiodeCompetitive Price 800um Silicon PhotodiodeCompetitive Price 800um Silicon Photodiode

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