Mmbt3904 NPN Plastic Encapsulate Transistors

• Customization: Available
• Certification: RoHS
• Encapsulation Structure: Plastic Sealed Transistor
• Model NO.: transistor
• Installation: SMD Triode
• Power Level: Medium Power
• Structure: NPN
• Marking: 1am
• Vcbo: 60V
• Vceo: 40V
• IC: 200mA
• PC: 200MW
• Junction Temperature: 150′c
• Storage Temperature: -55~+150′c
• MOQ: 20000PCS
• Lead Time: 2 Weeks
• Transport Package: Carton
• Specification: MMBT3904
• Trademark: ETOPMAY TOPMAY
• Origin: China
• Production Capacity: 6000000

Product Description

 

Product Description

Plastic Encapsulate Transistors(NPN)MMBT3904
 

1. Plastic Encapsulated Transistors
   • Plastic Encapsulated: Refers to the packaging technology where the transistor's internal die and leads are enclosed in a molded plastic casing. This provides:
     • Mechanical protection against physical damage.
     • Electrical insulation.
     • Thermal management (via heat-dissipating properties of the plastic).
   • Transistors: Semiconductor devices used for amplifying or switching electronic signals and electrical power.
2. NPN
   • Structure: A three-layer semiconductor device composed of two N-type semiconductors (emitter and collector) sandwiching a thin P-type semiconductor (base).
   • Conduction Mechanism:
     • Conducts current when a positive voltage is applied to the base relative to the emitter (forward-biased base-emitter junction).
     • Electrons flow from the emitter to the collector through the base, controlled by the base current.

Marking

Features

Complementary Type The PNP Transistor MMBT3906 is Recommended
Epitaxial Planar Die Construction

 

Specifications

MAXIMUM RATINGS (Ta=25'C unless otherwise noted)
 

Parameter	Symbol	Value	Unit
Collector-base voltage	VCBO	60	V
Collector-emitter voltage	VCEO	40	V
Emitter-base voltage	VEBO	6	V
Collector current	IC	200	mA
Collector power dissipation	PC	200	mW
Thermal resistance from junction to ambient	RθJA	625	ºC/W
Junction temperature	Tj	150	ºC
Storage temperature	TSTG	-55~+150	ºC

Product Parameters

ELECTRICAL CHARACTERISTICS (Ta= 25'C unless otherwise specified)

Parameter	Symbol	Test condition	Min	Typ.	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=10uA,IE=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC =1mA,IB=0	40			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10uA,IC=0	6			V
Collector cut-off current	ICEX	VCE =30V, VEB(off)=3V			50	nA
Collector cut-off current	ICBO	VCB=60V,IE=0			100	nA
Emitter cut-off current	IEBO	VEB=5V,IC=0			100	nA
DC current gain	hFE(1)	VCE =1V,IC=10mA	100		300
	hFE (2)	VCE =1V,IC=50mA	60
	hFE (3)	VCE=1V,IC=100mA	30
Collector-emitter saturation voltage	VCE(sat)	IC=50mA, IB=5mA			0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=50mA,IB=5mA			0.95	V
Transition frequency	fT	VCE=20V,IC=10mA,f=100MHz	300			MHz
Delay time	td	VCC=3V, VBE(off)=-0.5V, IC=10mA,IB1=1mA			35	ns
Rise time	Tr	VCC=3V, VBE(off)=-0.5V,IC=10mA, IB1=1mA			35	ns
Storage time	ts	VCC=3V, IC=10mA, IB1=IB2=1mA			200	ns
Fall time	tf	VCC=3V, IC=10mA, IB1=IB2=1mA			50	ns

Classification of h_FE

Rank	O	Y
Range	100-200	200-300

 

Drawing

 

Curve

 

Packaging & Shipping